Technological Capabilities
General MEMS processes
- Bulk micromachining (standard class 1000-10000 cleanroom w. Litho. available)
- Wet anisotropic etching (KOH)
- Wet isotropic etching
- Dry isotropic etching (RIE)
- Deep Reactive Ion Etching DRIE (external/technology partner)
- Wafer level packaging
- Anodic bonding
- Eutectic bonding (external/technology partner)
- Silicon Fusion Bonding
Harsh Environment MEMS
- LPCVD 3C SiC on Si, SiO2 and SOI, (amorphous, poly-, single crystal), (external/technology partner, own LPCVD reactor in progress)
- Controllable parameters: doping N, P, stress, crystal structure
- Selective deposition of SiC
- CBE SiC and GaN deposition planned
- High temperature metallization systems (steps: 200 C, 250-300 C, 350-400C, 600-650 C, >650 C) (650 C maximum for prototypes/demonstrators, development of industrial reliability standard metallization in progress)
- Low temperature fusion bonding
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Packaging (currently primarily with external partners)
- Wire bonding (Au, Al, ...)
- Gluing / soldering / welding (external partners)
- Flip-Chip bonding (external/technology partner)
- Multichip Modules (MCM-L/D), (external/technology partner)
- Plastic/polymer capping/die casting, (external/technology partner)
Analysis
- SEM, STEM, AFM, (ESEM planned)
- XRD, EDS, WDS, Auger, SIMS, RBS, Photoluminescence
- Raman spectroscopy
- Acoustic microscopy
- IR-cameras
- Hall Measurements
- Profilometer
- I-V/C-V measurements
- Metrology labs (temperature and humidity testing)
- FIB (planned)
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Modelling, numerical analysis and design
- FEM Analysis
- Mechanical
- Electrical
- Thermal
- Coupled
- Flow
- Layout and Design
- Mask design
- PCB design
- 3D CAD
- Mask fabrication
Presentations for download:
Technical presentation: Utah microfabrication facilities (PDF, 1.3MB)
Technical presentation: SiC based micro gassensors (PDF, 1.6MB) |
