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Projects

  • High temperature pressure sensors
  • SiC based micro gas sensors (resistive, optical)
  • µTAS, DNA sequencing
  • Micro gas sensors
  • Fully integrated neural interface
  • CBE Instrument development for SiC/GaN

Research in Harsh Environment MEMS

Technology Development
  • Harsh environment substrate materials
  • High temperature metallization systems
  • LPCVD and PECVD SiC thin film deposition (amorphous, poly-crystalline, single crystal mateiral)
Device development
  • Physical sensors (pressure, force, acceleration)
  • Chemical Sensors (gas, fluid concentration)
  • BioMEMS
  • Microfluidics
  • Microactuators
  
 
Piezoresistive pressure sensor
Fig.1: Piezoresistive pressure sensor with RIE etched 3-C SiC piezoresistors on SOI substrate.
 
Single crystal 3-C SiC
Fig. 3: Single crystal 3-C SiC deposited on Unibond substrates (200nm Si overlayer, 400 nm thick buried oxide layer, deposition using methylsilane at 1220°C). 		 
 
3-C SiC on SOI based micro hotplate
Fig.2: 3-C-SiC on SOI based micro hotplate for micro gas sensor applications (max. 650°C / 1000°C).
 
TEM micrograph
Fig.4: TEM micrograph of SiC/SOI amorphisation of SiC by ion implantation of Si, 500 keV, 1E15 cm², 3.5 MeV, 1E16 cm²;deffraction patterns indicate amorphous and crystalline regions.
 
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